effect of [gamma]-irradiation on impurity conduction of Sb-doped germanium. by GoМ€sta Swenson

Cover of: effect of [gamma]-irradiation on impurity conduction of Sb-doped germanium. | GoМ€sta Swenson

Published by Almqvist & Wiksell in Stockholm .

Written in English

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Subjects:

  • Germanium crystals -- Effect of radiation on.,
  • Hall effect.

Edition Notes

Bibliography: p. 535.

Book details

SeriesArkiv för fysik,, bd. 37, nr. 32
Classifications
LC ClassificationsQC1 .S923 bd. 37, nr. 32
The Physical Object
Pagination521-535 p.
Number of Pages535
ID Numbers
Open LibraryOL4617023M
LC Control Number77400697

Download effect of [gamma]-irradiation on impurity conduction of Sb-doped germanium.

Fig. 3 shows the room temperature Raman spectra of Sb-doped SnO 2 films deconvoluted in the range (– cm-1).In Table 2, we have listed the position of different modes of peak at cm-1 is assigned to A 1g generated mode of in-plane lattice oxygen width of this band is correlated with the crystallite size and oxygen defects, which may explain Cited by: Photoconductivity in germanium has been studied at temperatures and doping levels at which impurity conduction processes are important.

Under certain Cited by: 7. In Fig. 1 is illustrated a typical example of the resistivity vs temperature relation of metallic impurity conduction observed in Sb doped Ge. The critical donor concentration of metallic transition in this material is x iO’~ cm3, and the curves in Fig.

1 are for samples with donor concentration ND of ,33 and times by: Effects of impurity-doping on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 have been investigated.

The Al- and B-doped β-FeSi2 showed increase of both PL intensity and. On another hand, ~ has considered the jump of a carrier from one impurity state to an unoccupied neighbour, and therefore electronhonon scattering depends on the degree of compensation.

temperature thermal conductivity of Sb-doped Ge in the carrier concentration range 8 x 10~ to about 10~ cm3, and compared these results to similar data obtained Cited by: The impurity conduction in semiconductors in the intermediate impurity concentration region is investigated theoretically by using the data available on antimony-doped germanium with small.

Large and anomalous changes in the thermoelectric effect of [gamma]-irradiation on impurity conduction of Sb-doped germanium.

book of amorphous (a−) Ge films have been observed on doping with impurities of Al, Fe and Sb. Depe. It is proposed that the n-type conduction in germanium chalcogenides doped with a large Bi concentration is due to the effect of Bi dopants on the positive correlation energy defects present in.

The effective mass for conductivity calculation is the mass which is used in conduction related problems accounting for the detailed structure of the semiconductor.

These calculations include mobility and diffusion constants calculations. Another example is the calculation of the shallow impurity levels using a hydrogen-like model. The free electron model of metals has been used to explain the photo-electric effect (see section ).This model assumes that electrons are free to move within the metal but are confined to the metal by potential barriers as illustrated by Figure The minimum energy needed to extract an electron from the metal equals qF M, where F M is the workfunction.

Mg2Si1–xSnx compounds are low-cost and environmentally friendly thermoelectric materials expected to be applied as power generators in the intermediate temperature range. Optimization of the thermoelectric properties of Mg2Si1–xSnx compounds can be accomplished by the precise control and adjustment of the Mg content.

A series of Mg2(1+z)Si–ySnSby (0 ≤ y ≤. High purity germanium (HPGe) is the key material for gamma ray detectors production. Its high purity level (≤2 10 −4 ppb of doping impurity) has to be preserved in the bulk during the processes needed to form the detector junctions. With the goal of improving the device performance and expanding the application fields, in this paper many alternative doping processes are evaluated, in.

Similar values of 4 eV have been previously observed for Sb-doped SnO2.Panel B of Figure shows the evolution of the Sn3d5/2 BE recorded on Ir/ATO anode.

Here we report that CdTe alloying and Sb doping increase the density-of-states effective mass and introduce endotaxial nanostructuring in n-type PbTe, resulting in enhanced thermoelectric performance. A prior theoretical prediction for the presence of resonance states in the conduction band of this system, however, could not be confirmed.

An amount of 3 mol % CdTe alloying widens the band gap. The Doping of Semiconductors The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.

Pentavalent impurities Impurity atoms with 5 valence electrons produce n-type semiconductors by contributing extra electrons. Materials and Components Objective Questions and Answers Practice lots of multiple choice questions and answers in Material and Components.

For isotopes of an element They are atoms of the same atomic number with different mass The only difference in composition between isotopes of the same element is the number of neutrons in the nucleus The atomic weight of an. The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of × 10 13 – × 10 18 cm − to a doping level of 10 16 cm −3 order, commercially available () n-Ge substrates were used.

To obtain a doping level higher than 10 17 cm −3 order, which is commercially. The lattice thermal conductivity of the Bi-doped samples is lower than that of the Sb-doped one owing to the increased phonon scattering by Mg 2 Bi 3 precipitates and point defects.

Moreover, the effect of the precipitates is visible in the significant decrease in the lattice thermal conductivity with the increased Bi concentration.

Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (germanium out of lead solution. A correlation between the intensity of low-angle scattering of CO/sub 2/ laser radiation by impurity clouds of radius a = mu. and with an average charge loss factor lambda-bar was observed in nuclear-radiation detectors made of high-purity germanium.

The nature of this effect was explained by considering the interaction of an impurity. Band Theory of Solids A useful way to visualize the difference between conductors, insulators and semiconductors is to plot the available energies for electrons in the materials.

Instead of having discrete energies as in the case of free atoms, the available energy states form l to the conduction process is whether or not there are electrons in the conduction band. In the case of quasi-1D (Q1D) nanowire structures with high aspect ratio, there has been fundamental interest in elucidating the charge conduction mechanisms, e.g., the effects of size confinement, surface contribution, and impurity states.

A semiconductor detector in ionizing radiation detection physics is a device that uses a semiconductor (usually silicon or germanium) to measure the effect of incident charged particles or photons. Semiconductor detectors find broad application for radiation protection, gamma and X-ray spectrometry, and as particle detectors.

The peak position of Sb 1+ was eV higher than that of Sb 0 in Sb-doped Ge samples, while the peak position of Sb 1+ was eV higher than that of Sb 0 for Sb-doped Ge Sn samples. This means that the chemical bonding features of activated Sb in Ge and Ge Sn are different from each other, although the origin of this.

10 ÷ 1,5 K—here we again observe mixed conductivity like conductivity at ambient temperature. In this case R H is negative for the low magnetic field and positive for the high magnetic field, which means that at low temperatures in p-type p- InSb(Mn) crystals the intrinsic electrons conduction dominates.

We highlight that mixed conduction at low temperatures is a specific feature of InSb. In perfect semiconductors, there exist a band gap (forbidden band) composed of valence band (bottom) and conduction band (top). When defects are introduced (such as impurities, vacancies.

The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed. - Highlights: • Bulk and nano-grained TE materials were analyzed by DFT. • The electronic effects on both PbTe and TiNiSn were demonstrated.

• The role of impurities on the conductivity type was analyzed. In semiconductors with low levels of doping, the electron concentration in the conduction band is in general given by = ⁡ (− −) where E F is the Fermi level, E C is the minimum energy of the conduction band, and N C is a concentration coefficient that depends on temperature.

The above relationship for n e can be shown to apply for any conduction band shape (including non-parabolic. The substrate bias effect: The voltage applied to the back contact affects the threshold voltage of a MOSFET. The voltage difference between the source and the bulk, V BS changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in the depletion region.

This results in a modified. The difference is in the dopant. A doped semiconductor (as opposed to an intrinsic semiconductor) is one that has had specific impurity atoms introduced into it to shrink the band gap. An N-type semiconductor is one that has been doped with a pe. Electrical conductivity of water samples is used as an indicator of how salt-free, ion-free, or impurity-free the sample is; the purer the water, the lower the conductivity (the higher the resistivity).

Conductivity measurements in water are often reported as specific conductance, relative to the conductivity of pure water at 25 °C. In the case of quasi-1D (Q1D) nanowire structures with high aspect ratio, there is strong fundamental interest in elucidating the charge conduction mechanisms, e.g., the effects of size confinement, surface contribution, and impurity states.

Fig. Effect of an n-type impurity on the lattice structure. When silicon is doped with a pentavalent element, Group V in the periodic table, it becomes an n-type semiconductor.

The element (P in this example) has one electron left over after the covalent bonds are formed; this donor electron is donated to the conduction band. Conduction.

The thermal conductivity has also been correlated to doping levels in HVPE n-GaN/sapphire (0 0 0 1) by SThM on two sets of samples [,]. In both sets of data, the thermal conductivity decreased linearly with log n, n being the electron concentration, the variation being about a factor of 2 decrease in k for every decade increase in n.

B: Semiconductor at 77 K; vast reduction in thermal ionization to conduction band. C: Semiconductor at room temperature significant thermal excitation of electrons from valence to conduction band; in this state the semiconductor will conduct.

D: Effect of 'donor' atom impurities in -type semiconductor material. Upon Bi or Sb doping, the fermi energy is uplifted to the conduction band as a result of the overlap between the impurity states and the bottom of conduction band (figures 3(b) and (c)), which leads to a n-type conductivity.

This feature is different from that of the conventional n-type semiconductor such as phosphorus doped monocrystalline. Results and Discussion. Figure 1(a) shows the results of the optical absorption spectroscopy measurements for various Sb x (Ge Se ) 1-x films.

In many amorphous semiconductors, the dependence of the absorption coefficient (α) on the photon energy (hν) is well expressed by Tauc's relation, for hν > E g, with a broad tail structure due to trap states for hν.

Data for amorphous germanium are also analysed. The theory fits the DC conductivity which follows a T-1/4 law, with a characteristic frequency R 0, of 10 21 Hz.

The AC conductivity is qualitatively in agreement but the onset of AC behaviour is two orders of magnitude higher in. Germanium (Ge), a chemical element between silicon and tin in Group 14 (IVa) of the periodic table, a silvery-gray metalloid, intermediate in properties between the metals and the gh germanium was not discovered until by Clemens Winkler, a German chemist, its existence, properties, and position in the periodic system had been predicted in by the.

A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from.

The germanium transmutes to gallium (n-type dopant) from occasional high energy gamma particles impinging on isotopic impurities in the crystal as well as Arsenic (p-type) from alpha particles caused by particle showers.

\$\endgroup\$ – crasic Sep 1 '15 at Sahil is a BTech in Marine Electrical. However, one important feature of semiconductors is that their conductivity can be increased and controlled by doping with impurities and gating with electric fields.

The conductivity of semiconductors can be greatly improved by introducing a small number of suitable replacement atoms called IMPURITIES.This means that the EG is acting as an impurity, nevertheless, we observed that at an amount of % (w/v) EG the effect is lower than for % (w/v), which means that a reversed effect is observed.

According to Table 1, the free carrier concentration for the % (w/v) EG sample is .

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